After successfully growing single-crystal TaP, we measured its longitudinal resistivity ($\rho_{xx}$) and Hall resistivity ($\rho_{yx}$) at magnetic fields up to 9 T in the temperature range of 2-300 K. At 8 T, the magnetoresistance (MR) reached 3.28 $\times$ 10$^5$$\%$ at 2 K, 176$\%$ at 300 K. Neither value appeared saturated. We confirmed that TaP is a hole-electron compensated semimetal with a low carrier concentration and high hole mobility of $\mu_{\mathrm{h}}$=3.71 $\times$ $10^5$ cm$^2$/V s, and found that a magnetic-field-induced metal-insulator transition occurs at room temperature. Remarkably, because a magnetic field (H) was applied in parallel to the electric field (E), a negative MR due to a chiral anomaly was observed and reached $-$3000$\%$ at 9 T without any sign of saturation, either, which is in contrast to other Weyl semimetals (WSMs). The analysis of the Shubnikov-de Haas (SdH) oscillations superimposed on the MR revealed that a nontrivial Berry's phase with a strong offset of 0.3958, which is the characteristic feature of charge carriers enclosing a Weyl node. These results indicate that TaP is a promising candidate not only for revealing fundamental physics of the WSM state but also for some novel applications.
National Basic Research Program of China(2012CB821404)
National Natural Science Foundation of China(11204059)
National Basic Research Program of China(2015CB921004)
National Basic Research Program of China(2011CBA00103)
National Natural Science Foundation of China(11374261)
This work was supported by the National Basic Research Program of China (Grant Nos. 2015CB921004, 2012CB821404 and 2011CBA00103), the National Natural Science Foundation of China (Grant Nos. 11374261 and 11204059), Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ12A04007) and the Fundamental Research Funds for the Central Universities of China.
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