Based on the optimization idea of the electric field from the surface
to the bulk, this paper summarizes the basic theory and the two types
of analytical optimization methods of the super junction (SJ) device.
The essential difference between the SJ and the conventional power
MOS structure is: the former is the junction-type voltage sustaining
layer with the periodic N/P dopings and the later is the resistance-type
voltage sustaining layer with the single conductive type. The positive
and negative charges satisfying the charge balance are introduced
into the SJ voltage sustaining layer, which causes the two-dimensional
electric field to realize the optimization from the surface to the
bulk. The paper gives the concepts of the charge and potential electric
fields, analyzes the non-full depletion and full depletion modes,
introduces the mechanism of the transient process and forward biased
safe operating area, discusses the equivalent substrate model and
the optimized substrate conditions. Finally, the minimum specific
on-resistance
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