Electrical transport and photoresponse properties of single-crystalline p-type Cd

TingYuan DUAN; Zheng LOU; GuoZhen SHEN

doi:10.1007/s11433-014-5629-4

SCIENCE CHINA Physics, Mechanics & Astronomy

SCIENCE CHINA Physics, Mechanics & Astronomy, Volume 58, Issue 2: 027801(2015) https://doi.org/10.1007/s11433-014-5629-4

Electrical transport and photoresponse properties of single-crystalline p-type Cd

TingYuan DUAN, Zheng LOU, GuoZhen SHEN

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ReceivedOct 30, 2014
AcceptedNov 17, 2014
PublishedDec 5, 2014

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Abstract

Cd₃As₂is an important II–V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd₃As₂ nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd₃As₂ nanowires, which exhibited a high I_on/I_off of 10⁴with a hole mobility of 6.02 cm²V^- ¹s^-1. Photoresponse properties of the Cd₃As₂ nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd₃As₂nanowires can be the basic material of next generation electronic and optoelectronic devices.

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National Natural Science Foundation of China(61377033)

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61.46.Hk	Nanocrystals
81.15.Gh	Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) (for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
85.60.Gz	Photodetectors (including infrared and CCD detectors) (for superconducting infrared detectors, see 85.25.Pb; for superconducting optical, x-ray and gamma-ray detectors, see 85.25.Oj; see also 07.57.Kp in instruments

Electrical transport and photoresponse properties of single-crystalline p-type Cd

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