Characteristics of surface acoustic waves in <inline-formula><mml:math display="inline"><mml:mrow><mml:mstyle mathvariant="bold"><mml:mo stretchy="false">(</mml:mo><mml:mn>11</mml:mn></mml:mstyle><mml:mover accent="true"><mml:mstyle mathvariant="bold"><mml:mrow><mml:mn other="0">2</mml:mn></mml:mrow></mml:mstyle><mml:mrow><mml:mo other="1">ˉ</mml:mo></mml:mrow></mml:mover><mml:mstyle mathvariant="bold"><mml:mn>0</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:mstyle></mml:mrow></mml:math></inline-formula>ZnO film/<italic>R</italic>-sapphire substrate structures

Yan Wang; ShuYi Zhang; Jing Xu; YingCai Xie; XiaoDong Lan

doi:10.1007/s11433-017-9092-0

SCIENCE CHINA Physics, Mechanics & Astronomy

SCIENCE CHINA Physics, Mechanics & Astronomy, Volume 61, Issue 2: 024311(2018) https://doi.org/10.1007/s11433-017-9092-0

Characteristics of surface acoustic waves in (112ˉ0)ZnO film/R-sapphire substrate structures

Yan Wang^1,2,*, ShuYi Zhang^2,*, Jing Xu¹, YingCai Xie¹, XiaoDong Lan²

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ReceivedJun 21, 2017
AcceptedAug 22, 2017
PublishedDec 5, 2017

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Abstract

(112ˉ0)ZnO film/R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [11ˉ00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity (v_p), electromechanical coupling coefficient (k²), temperature coefficient of frequency (TCF) and reflection coefficient (r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k² of 4.95% in (90°, 90°, 0°) (112ˉ0)ZnO film/R-sapphire substrate associated with a phase velocity of 5300?m/s; and the 0th Love wave in (0°, 90°, 0°) (112ˉ0)ZnO film/R-sapphire substrate has a maximum k² of 3.86% associated with a phase velocity of 3400?m/s. And (112ˉ0)ZnO film/R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

Funded by

Foundation of Nanjing University of Posts and Telecommunications(NY213018)

Natural Science Foundation of Jiangsu Higher Education Institutions of China(13KJB140008)

National Natural Science Foundation of China(11304160)

Acknowledgment

This work was supported by the National Natural Science Foundation of China (Grant No.11304160), the Natural Science Foundation of Jiangsu Higher Education Institutions of China (Grant No. 13KJB140008) and the Foundation of Nanjing University of Posts and Telecommunications (Grant No. NY213018).

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Figure 1
(Color online) Schematic of IDT/ $(11 \overset{ˉ}{2} 0)$ ZnO film/R-sapphire substrate structure (a) and Euler angles (b).
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Figure 2
Typical impedance responses of SAW resonators based on IDT/ $(11 \overset{ˉ}{2} 0)$ ZnO film/R-sapphire substrate structures. (a) Rayleigh waves; (b) Love waves.
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Figure 3
(Color online) Displacement distributions in symmetric and anti-symmetric modes. (a) Rayleigh waves; (b) Love waves.
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Figure 4
(Color online) v_p and k² of SAWs as a function of h/λ in $(11 \overset{ˉ}{2} 0)$ ZnO film/R-sapphire substrate structures. (a) Rayleigh waves; (b) Love waves.
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Figure 5
(Color online) TCF of SAWs as a function of h/λ in $(11 \overset{ˉ}{2} 0)$ ZnO film/R-sapphire substrate structures. (a) Rayleigh waves; (b) Love waves.
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Figure 6
(Color online) Reflection coefficients of SAW as a function of h/λ in IDT/ $(11 \overset{ˉ}{2} 0)$ ZnO film/R-sapphire substrate with different electrode materials. (a) Rayleigh waves; (b) Love waves.
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Figure 7
(Color online) Reflection coefficients of SAWs as a function of h/λ in IDT/ $(11 \overset{ˉ}{2} 0)$ ZnO film/R-sapphire substrate structures with different Al electrode height. (a) Rayleigh waves; (b) Love waves.
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Figure 8
(Color online) Variations of maxima k_max² for SAWs in (α, 90°, 0°) $(11 \overset{ˉ}{2} 0)$ ZnO films/R-sapphire substrates as a function of α: (a) Rayleigh waves; (b) Love waves.

Table 1 Material constants and temperature coefficients used in simulations [18,19]

Parameter	Symbol	ZnO	Sapphire
Elastic constant (10¹⁰?N/m²)	C ₁₁	20.97	49.73
	C ₁₂	12.11	16.28
	C ₁₃	10.53	11.60
	C ₁₄	–	?2.19
	C ₃₃	21.12	50.09
	C ₄₄	4.27	14.68
	C ₆₆	–	16.8
Temperature coefficients (10^?4/°C)	TC(C₁₁)	?1.12	–
	TC(C₁₃)	?1.61	–
	TC(C₃₃)	?1.23	–
	TC(C₄₄)	?0.70	–
Piezoelectric constants (C/m²)	e ₂₄	?0.48	–
	e ₃₁	?0.57	–
	e ₃₃	1.32	–
Relative dielectric constants	ε₁₁/ε₀	7.57	9.34
	ε₁₁/ε₀	10.2	11.54
Density (kg/m³)	ρ	5670	3982

Table 2 Material parameters of Al, Cu, Ag and Au used in simulations^a)

Material	Density (kg/m³)	Young’s modulus (GPa)	Poisson’s ratio
Al	2700	70.3	0.345
Cu	8960	120	0.34
Ag	10500	83	0.37
Au	19300	70	0.44

a)From COMSOL 4.3b Material Library

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68.35.Iv	Acoustical properties
68.60.-p	Physical properties of thin films, nonelectronic
77.65.Dq	Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics (see also 43.35.Pt Surface waves in solids and liquids-in Acoustics Appendix; for surface acoustic wave transducers, see 43.38.Rh-in Acoustics Appendix)
43.38.Rh	Surface acoustic wave transducers (see also 43.25.Fe and 43.35.Pt

Characteristics of surface acoustic waves in (112ˉ0)ZnO film/R-sapphire substrate structures

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