III族氮化物 In
国家自然科学基金资助项目(61225019)
国家高技术研究发展计划(2011AA050514)
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图1
(网络版彩图)
图2
(网络版彩图)纤锌矿结构InN不同晶格极性的示意图
图3
(网络版彩图)In和N极性InN生长前沿
图4
(网络版彩图)原位椭偏仪测试的介电常数随In原子束流变化示意图, 由介电常数的变化可以把InN的生长分为两个区域, 富In区域和富N区域. 其中圆点表示的是归一的介电常数值, 方块表示的是同样厚度在位检测的介电常数值
图5
(网络版彩图)不同生长温度下In极性InN的表面形貌AFM图, 扫描范围分别为10
图6
(网络版彩图)不同生长温度下N极性InN外延膜的表面形貌, 扫描范围分别为10
图7
(网络版彩图)InN生长速度随温度变化关系. 插图为边界温度控制外延法示意图, 随着生长的进行, 将热偶温度从500°C逐步降低到480°C
图8
(网络版彩图)InN薄膜(002)和(102)面摇摆曲线FWHMs随厚度的变化关系
图9
(网络版彩图) 5
图10
(网络版彩图)(a) 室温下InN薄膜背景电子浓度和迁移率随厚度的变化关系. (b) InN薄膜背景电子浓度和迁移率随温度变化关系. 实心方块为直接测量值, 实心三角为导出的InN体材料的迁移率. 利用EMC计算出来的迁移率同温度的依赖关系如实线所示. 插图中实线为计算得到的电子浓度同温度的依赖关系
图11
InN薄膜室温下的PL谱
图12
(网络版彩图)In吸附原子在In
图13
(网络版彩图)In
图14
(网络版彩图)In
图15
(网络版彩图)In
图16
(网络版彩图)In
图17
(网络版彩图)In
图18
(网络版彩图)In
图19
(网络版彩图)根据光学吸收边确定的In
图20
(网络版彩图)室温下In
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