High optical efficiency GaN based blue LED on silicon substrate

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SCIENTIA SINICA Physica, Mechanica & Astronomica
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SCIENTIA SINICA Physica, Mechanica & Astronomica, Volume 45, Issue 6: 067302(2015) https://doi.org/10.1360/SSPMA2015-00027

High optical efficiency GaN based blue LED on silicon substrate

FengYi JIANG, JunLin LIU, Li WANG, ChuanBing XIONG, WenQing FANG, ChunLan MO, YingWen TANG, GuangXu WANG, LongQuan XU, Jie DING, XiaoLan WANG, ZhiJue QUAN, JianLi ZHANG, Meng ZHANG, Shuan PAN, ChangDa ZHENG
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  • AcceptedMar 11, 2015
  • PublishedMay 5, 2015
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Abstract

经过近十年的探索, 作者在国际上率先突破了硅衬底高光效GaN基蓝光LED材料生长技术及其薄膜型芯片制造技术, 制备了内量子效率和取光效率均高达80%的单面出光垂直结构GaN基蓝光LED, 并实现了产业化和商品化, 成功地应用于路灯、球炮灯、矿灯、筒灯、手电和显示显像等领域. 本文就相关关键技术进行全面系统地介绍. 发明了选区生长、无掩模微侧向外延等技术, 仅用100 nm厚的单一高温AlN作缓冲层, 制备了无裂纹、厚度大于3 μm的器件级GaN基LED薄膜材料, 位错密度为5×108 cm-2. 发明了自成体系的适合硅衬底GaN基薄膜型LED芯片制造的工艺技术, 包括高反射率低接触电阻p型欧姆接触电极、高稳定性低接触电阻n型欧姆接触电极、表面粗化、互补电极、GaN薄膜应力释放等技术, 获得了高光效、高可靠性的硅基LED, 蓝光LED(450 nm)在350 mA(35 A/cm2)下, 光输出功率达657 mW, 外量子效率为68.1%.


Funded by

国家科技支撑计划(2011BAE32B01)

国家自然科学基金(61334001)

电子发展基金

国家高技术研究发展计划(2011AA03A101)


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