In the process of informatization, the Moore’s Law is getting closer to the limit. Combining microelectronics and optoelectronics to develop silicon-based large-scale integrated optoelectronic technology has become the industry consensus. It is also the inevitable direction of technology development. In recent years, silicon photonics has made great progress, many key devices have reached the commercial standard, and some of the performance is even higher than the current commercial device performance. In silicon based optoelectronic integrated devices, silicon based light source is the most important but has not yet been completely resolved. Although silicon is an indirect band gap semiconductor material and luminous efficiency is very low, people have not given up efforts to prepare silicon based light source. Silicon based light sources include silicon based optical waveguide amplifiers, light emitting diodes, lasers, etc., of which silicon based optical waveguide amplifier is the basis for lasers and the indispensable device in a silicon based optoelectronic integrated circuit. If the optical waveguide amplifier has a high net gain, optically pumped lasers can be obtained by designing the appropriate resonant cavities at both ends of the optical waveguide amplifier. In this paper, we focus on silicon based optical waveguide amplifier, introducing the two main research directions of silicon based waveguide amplifier, silicon based hybrid integrated III-V semiconductor optical waveguide amplifier and silicon based rare earth ion doped optical waveguide amplifier. This paper discusses the principle, preparation method and development process of these two research directions in detail respectively, and lists relevant typical research results. And we briefly introduce other optical amplification technology. Finally, summary and prospect are given.
教育部新世纪优秀人才计划
国家自然科学基金(61377056)
[1] Zhou Z P. Silicon Photonics (in Chinese). Beijing: Peking University Press, 2012 [周治平. 硅基光电子学. 北京: 北京大学出版社, 2012]. Google Scholar
[2] Wang X J, Su Z T, Zhou Z P. Recent progress of silicon photonics (in Chinese). Sci Sin-Phys Mech Astron, 2015, 45: 014201 CrossRef ADS Google Scholar
[3] Mason B, Barton J, Fish G A, et al. Design of sampled grating DBR lasers with integrated semiconductor optical amplifiers. IEEE Photon Technol Lett, 2000, 12: 762-764 CrossRef ADS Google Scholar
[4] Murthy S, Kato M, Nagarajan R, et al. Large-scale photonic integrated circuit transmitters with monolithically integrated semiconductor optical amplifiers. In: Proceedings of Optical Fiber Communication/National Fiber Optic Engineers Conference. New York: IEEE Press, 2008. Google Scholar
[5] Nagarajan R, Kato M, Hurtt S, et al. Monolithic, 10 and 40 channel InP receiver photonic integrated circuits with on-chip amplification. In: Proceedings of Optical Fiber Communication Conference. Anaheim: Optical Society of America Press, 2007. PDP32. Google Scholar
[6] Durhuus T, Mikkelsen B, Joergensen C, et al. All-optical wavelength conversion by semiconductor optical amplifiers. J Lightw Technol, 1996, 14: 942-954 CrossRef ADS Google Scholar
[7] Dutta N K, Wang Q. Semiconductor Optical Amplifiers. Singapore: World Scientific, 2006. Google Scholar
[8] Davenport M L, Skendzic S, Volet N, et al. Heterogeneous Silicon/III-V Semiconductor Optical Amplifiers. IEEE J Select Topics Quantum Electron, 2016, 22: 78-88 CrossRef Google Scholar
[9] Wang H C, Huang L R, Shi Z W. Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier. J Semicond, 2011, 32: 064010 CrossRef ADS Google Scholar
[10] Duan G H, Jany C, Le Liepvre A, et al. Hybrid III-V on silicon lasers for photonic integrated circuits on silicon. IEEE J Sel Top Quantum Electron, 2014, 20: 90020X. Google Scholar
[11] Hawkins A R, Wu W, Abraham P, et al. High gain-bandwidth-product silicon heterointerface photodetector. Appl Phys Lett, 1997, 70: 303-305 CrossRef ADS Google Scholar
[12] Liang D, Chapman D C, Li Y, et al. Uniformity study of wafer-scale InP-to-silicon hybrid integration. Appl Phys A, 2011, 103: 213-218 CrossRef ADS Google Scholar
[13] Adler F, Moutzouris K, Leitenstorfer A, et al. Phase-locked two-branch erbium-doped fiber laser system for long-term precision measurements of optical frequencies. Opt Express, 2004, 12: 5872-5880 CrossRef ADS Google Scholar
[14] Keyvaninia S, Muneeb M, Stankovi? S, et al. Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate. Opt Mater Express, 2013, 3: 35-46 CrossRef Google Scholar
[15] Coldren L A. Diode Lasers and Photonic Integrated Circuits. Opt Eng, 1997, 36: 616 CrossRef ADS Google Scholar
[16] Linghan L, Higo A, Higurashi E, et al. SOI platform and III-V integrated active photonic device by direct bonding for data communication. In: Proceedings of Low Temperature Bonding for 3D Integration. New York: IEEE, 2012. Google Scholar
[17] Park H, Fang A W, Cohen O, et al. A hybrid AlGaInAs-silicon evanescent amplifier. IEEE Photon Technol Lett, 2007, 19: 230-232 CrossRef ADS Google Scholar
[18] Cheung S, Kawakita Y, Shang K, et al. Theory and design optimization of energy-efficient hydrophobic wafer-bonded III-V/Si hybrid semiconductor optical amplifiers. J Lightw Technol, 2013, 31: 4057-4066 CrossRef ADS Google Scholar
[19] Kaspar P, de Valicourt G, Brenot R, et al. Hybrid III-V/silicon SOA in optical network based on advanced modulation formats. IEEE Photon Technol Lett, 2015, 27: 2383-2386 CrossRef ADS Google Scholar
[20] Mears R J, Reekie L, Jauncey I M, et al. Low-noise erbium-doped fibre amplifier operating at 1.54 μm. Electron Lett, 1987, 23: 1026-1028 CrossRef Google Scholar
[21] Bradley J D, Pollnau M. Erbium-doped integrated waveguide amplifiers and lasers. Laser Photon Rev, 2011, 5: 368–403. Google Scholar
[22] Polman A. Erbium implanted thin film photonic materials. J Appl Phys, 1997, 82: 1-39 CrossRef ADS Google Scholar
[23] Kenyon A J. Recent developments in rare-earth doped materials for optoelectronics. Prog Quantum Electron, 2002, 26: 225-284 CrossRef ADS Google Scholar
[24] Zimmerman D R, Spiekman L H. Amplifiers for the masses: EDFA, EDWA, and SOA amplets for metro and access applications. J Lightw Technol, 2004, 22: 63-70 CrossRef ADS Google Scholar
[25] Brinkmann R, Baumann I, Dinand M, et al. Erbium-doped single- and double-pass Ti:LiNbO3 waveguide amplifiers. IEEE J Quantum Electron, 1994, 30: 2356-2360 CrossRef ADS Google Scholar
[26] Suche H, Baumann I, Hiller D, et al. Modelocked Er:Ti:LiNbO3-waveguide laser. Electron Lett, 1993, 29: 1111-1112 CrossRef Google Scholar
[27] van den Hoven G N, Koper R J I M, Polman A, et al. Net optical gain at 1.53 μm in Er‐doped Al2O3 waveguides on silicon. Appl Phys Lett, 1996, 68: 1886-1888 CrossRef ADS Google Scholar
[28] Chryssou C E, Di Pasquale F, Pitt C W. Improved gain performance in Yb3+-sensitized Er3+-doped alumina (Al2O3) channel optical waveguide amplifiers. J Lightw Technol, 2001, 19: 345-349 CrossRef ADS Google Scholar
[29] Daldosso N, Pavesi L. Nanosilicon photonics. Laser Photon Rev, 2009, 3: 508-534 CrossRef Google Scholar
[30] Barrios C A, Lipson M. Electrically driven silicon resonant light emitting device based on slot-waveguide. Opt Express, 2005, 13: 10092-10101 CrossRef ADS Google Scholar
[31] Yin Y, Sun K, Xu W J, et al. 1.53 μm photo- and electroluminescence from Er3+ in erbium silicate. J Phys-Condens Matter, 2009, 21: 012204 CrossRef PubMed ADS Google Scholar
[32] Wang B, Guo R M, Wang X J, et al. Near-infrared electroluminescence in ErYb silicate based light-emitting device. Opt Mater, 2012, 34: 1371-1374 CrossRef ADS Google Scholar
[33] Nykolak G, Haner M, Becker P C, et al. Systems evaluation of an Er3+-doped planar waveguide amplifier. IEEE Photon Technol Lett, 1993, 5: 1185-1187 CrossRef ADS Google Scholar
[34] Wang X J, Nakajima T, Isshiki H, et al. Fabrication and characterization of Er silicates on SiO2/Si substrates. Appl Phys Lett, 2009, 95: 041906 CrossRef ADS Google Scholar
[35] Strohhofer C, Polman A. Silver as a sensitizer for erbium. Appl Phys Lett, 2002, 81: 1414-1416 CrossRef ADS Google Scholar
[36] Strohh?fer C, Kik P G, Polman A. Selective modification of the Er3+4I11/2 branching ratio by energy transfer to Eu3+. J Appl Phys, 2000, 88: 4486-4490 CrossRef ADS Google Scholar
[37] van den Hoven G N, Snoeks E, Polman A, et al. Photoluminescence characterization of Er‐implanted Al2O3 films. Appl Phys Lett, 1993, 62: 3065-3067 CrossRef ADS Google Scholar
[38] Han H S, Seo S Y, Shin J H, et al. Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier. Appl Phys Lett, 2002, 81: 3720-3722 CrossRef ADS Google Scholar
[39] Isshiki H, de Dood M J A, Polman A, et al. Self-assembled infrared-luminescent Er-Si-O crystallites on silicon. Appl Phys Lett, 2004, 85: 4343-4345 CrossRef ADS Google Scholar
[40] Wang X J, Wang B, Wang L, et al. Extraordinary infrared photoluminescence efficiency of Er0.1Yb1.9SiO5 films on SiO2/Si substrates. Appl Phys Lett, 2011, 98: 071903 CrossRef ADS Google Scholar
[41] Guo R, Wang X, Zang K, et al. Optical amplification in Er/Yb silicate strip loaded waveguide. Appl Phys Lett, 2011, 99: 161115 CrossRef ADS Google Scholar
[42] Guo R, Wang B, Wang X, et al. Optical amplification in Er/Yb silicate slot waveguide. Opt Lett, 2012, 37: 1427 CrossRef PubMed ADS Google Scholar
[43] Wang L, Guo R M, Wang B, et al. Hybrid silicate waveguides for amplifier application. IEEE Photon Technol Lett, 2012, 24: 900-902 CrossRef Google Scholar
[44] Wang X, Zhuang X, Yang S, et al. High gain submicrometer optical amplifier at near-infrared communication band. Phys Rev Lett, 2015, 115: 027403 CrossRef PubMed ADS Google Scholar
[45] Shu H W, Su Z T, Wang X J, et al. Recent progress of silicon photonics for middle-infrared application (in Chinese). Telecommun Sci, 2015, 31: 2015274 [舒浩文, 苏昭棠, 王兴军, 等. 面向中红外应用的硅基光电子学最近研究进展. 电信科学, 2015, 31: 2015274]. Google Scholar
[46] Ye R, Xu C, Wang X, et al. Room-temperature near-infrared up-conversion lasing in single-crystal Er-Y chloride silicate nanowires. Sci Rep, 2016, 6: 34407 CrossRef PubMed ADS Google Scholar
[47] Liu J, Sun X, Pan D, et al. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Opt Express, 2007, 15: 11272-11277 CrossRef ADS Google Scholar
[48] Liu J, Sun X, Camacho-Aguilera R, et al. Ge-on-Si laser operating at room temperature. Opt Lett, 2010, 35: 679-681 CrossRef PubMed ADS Google Scholar
[49] Claps R, Dimitropoulos D, Raghunathan V, et al. Observation of stimulated Raman amplification in silicon waveguides. Opt Express, 2003, 11: 1731-1739 CrossRef ADS Google Scholar
[50] Eichhorn M, Pollnau M. Spectroscopic Foundations of Lasers: Spontaneous Emission Into a Resonator Mode. IEEE J Select Topics Quantum Electron, 2015, 21: 486-501 CrossRef Google Scholar
[51] Patel F D, Dicarolis S, Lum P, et al. A compact high-performance optical waveguide amplifier. IEEE Photon Technol Lett, 2004, 16: 2607-2609 CrossRef ADS Google Scholar
[52] Pollnau M. Rare-earth-ion-doped waveguide lasers on a silicon chip. In: Proceedings of SPIE 9359, Optical Components and Materials XII. San Francisco: SPIE, 2015. 935910. Google Scholar
[53] Bradley J D B, Costa e Silva M, Gay M, et al. 170 Gbit/s transmission in an erbium-doped waveguide amplifier on silicon. Opt Express, 2009, 17: 22201-22208 CrossRef PubMed Google Scholar
[54] Zhou X, Yu J J, Huang M F, et al. Transmission of 32-Tb/s capacity over 580 km using RZ-shaped PDM-8QAM modulation format and cascaded multimodulus blind equalization algorithm. J Lightw Tech, 2010, 28: 456-465 CrossRef ADS Google Scholar
[55] Soulard R, Zinoviev A, Doualan J L, et al. Detailed characterization of pump-induced refractive index changes observed in Nd:YVO4, Nd:GdVO4 and Nd:KGW. Opt Express, 2010, 18: 1553-1568 CrossRef PubMed ADS Google Scholar
[56] Blaize S, Bastard L, Cassagnetes C, et al. Multiwavelengths DFB waveguide laser arrays in Yb-Er codoped phosphate glass substrate. IEEE Photon Technol Lett, 2003, 15: 516-518 CrossRef ADS Google Scholar
[57] Seufert J, Fischer M, Legge M, et al. DFB laser diodes in the wavelength range from 760 nm to 2.5 μm. Spectrochim Acta Part A-Mol Biomol Spectr, 2004, 60: 3243-3247 CrossRef PubMed ADS Google Scholar
Figure 1
(Color online) The diagram of silicon bandgap.
Figure 2
The spectral region of the compound semiconductors formed using group III and group V elements.
Figure 3
(Color online) (a) Schematic cross section of a directly bonded heterogeneous waveguide with a wide implanted mesa design; (b) micrograph of the fabricated amplifiers prior to metallization
Figure 4
(Color online) (a) Device structure cross section; (b) SEM image
Figure 5
(Color online) Amplifier gain versus wavelength with different current levels
Figure 6
(Color online) Top-view (a), first cross-sectional view (b) and second cross sectional view (c) of proposed device design
Figure 7
(Color online) Top and cross-sectional views of the taper structure for mode transfer between III-V and silicon waveguides of the hybrid SOA. Simulated mode profiles are given for three exemplary cross-sections
Figure 8
(Color online) Fiber to fiber gain as a function of the injected optical power for various currents applied to the SOA (the origin of the peak around –8 dBm has not yet been fully understood)
Figure 9
(Color online) Primary processes involved in Er sensitization by Yb co-doping
Figure 10
(Color online) Er-doped waveguide fabrication methods. (a) Femtosecond laser writing directly into an Er-doped glass substrate; (b) Er-doped layer deposition followed by reactive ion etching and passivation by top-cladding deposition.
Figure 11
PL spectrum, taken at room temperature, of an Er-implanted (2.3×1015 Er cm–2, 800 keV, peak concentration 0.23%) Al2O3 film annealed at 950°C (
Figure 12
Pump power dependence of SE. It shows a SE of up to 14 dB/cm, implying a possible net gain of up to 7 dB/cm. From the fit, we obtain emission cross section of 2×10–19?cm2 and an effective excitation cross section of ≥10–17?cm2 at 477?nm
Figure 13
Room-temperature photoluminescence spectrum of Er-Si-O crystals on Si under 488?nm excitation (pump power 100?mW). The inset shows a schematic of an Er-O6 octahedron
Figure 14
Room-temperature photoluminescence excitation spectrum of Er-Si-O crystals on Si. The 1.53?μm photoluminescence is monitored as a function of pump wavelength
Figure 15
(a) PL spectra of Er2–
Figure 16
(Color online) (a) Typical spectra of the guided PL (black) only with the pump laser on; the probe laser at 1534 or 1543?nm, and the total output with both the probe and the pump lasers are present (pumped at 36?mW); (b) pump power dependent net gain for the wires with core diameters of
Figure 17
(Color online) Spectra of the nanowire around 979?nm in di?erent measurement temperature and the dependence of emission intensity and linewidth of the 979.1?nm peak to the temperature (inset).
|
集成方法 |
性能 |
|
|
直接键合 |
亲水键合 |
低限制因子, 热传导性好, 退火温度300°C, 适合较大热膨胀系数失配的材料进行连接 |
|
疏水键合 |
低限制因子, 热传导性好, 退火温度650°C |
|
|
间接键合 |
高限制因子, 热传导性差, 脊波导更坚固, 有源区和无源区之间过渡复杂 |
|
Copyright 2019 Science China Press Co., Ltd. 科学大众杂志社有限责任公司 版权所有
京ICP备18024590号-1
Download PDF
