References

[1] 1 Akasaki I, Amano H, Kito M, et al. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n-junction LED. J Luminescence, 1991, 48-49: 666–670. Google Scholar http://scholar.google.com/scholar_lookup?title=1 Akasaki I, Amano H, Kito M, et al. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n-junction LED. J Luminescence, 1991, 48-49: 666–670&

[2] Nakamura S, Mukai T, Senoh M. High-power GaN p-n-junction blue-light-emitting diodes. Jpn J Appl Phys Part 2-Lett, 1991, 30: L1998-L2001 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=High-power GaN p-n-junction blue-light-emitting diodes&author=Nakamura S&author=Mukai T&author=Senoh M&publication_year=1991&journal=Jpn J Appl Phys Part 2-Lett&volume=30&pages=L1998-L2001

[3] Ponce F A, Bour D P. NItride-based semiconductors for blue and green light-emitting devices. Nature, 1997, 386: 351-359 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=NItride-based semiconductors for blue and green light-emitting devices&author=Ponce F A&author=Bour D P&publication_year=1997&journal=Nature&volume=386&pages=351-359

[4] 4 Nakamura S. III-V nitride based light-emitting devices. Solid State Commun, 1997, 102: 237–243, 245–248. Google Scholar http://scholar.google.com/scholar_lookup?title=4 Nakamura S. III-V nitride based light-emitting devices. Solid State Commun, 1997, 102: 237–243, 245–248&

[5] Cho J, Schubert E F, Kim J K. Efficiency droop in light-emitting diodes: Challenges and countermeasures. Laser Photonics Rev, 2013, 7: 408-421 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Efficiency droop in light-emitting diodes: Challenges and countermeasures&author=Cho J&author=Schubert E F&author=Kim J K&publication_year=2013&journal=Laser Photonics Rev&volume=7&pages=408-421

[6] Wang J X, Wang L, Zhao W, et al. Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer. Sci China-Tech Sci, 2010, 53: 306-308 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer&author=Wang J X&author=Wang L&author=Zhao W&publication_year=2010&journal=Sci China-Tech Sci&volume=53&pages=306-308

[7] Wang L, Wang J X, Zhao W, et al. Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells. Chin Phys B, 2010, 19: 076803 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells&author=Wang L&author=Wang J X&author=Zhao W&publication_year=2010&journal=Chin Phys B&volume=19&pages=076803

[8] Lahmann S, Hitzel F, Rossow U, et al. Analysis of quantum efficiency of high brightness GaInN/GaN quantum wells. Phys Status Solidi C, 2003, 0: 2202-2205 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Analysis of quantum efficiency of high brightness GaInN/GaN quantum wells&author=Lahmann S&author=Hitzel F&author=Rossow U&publication_year=2003&journal=Phys Status Solidi C&volume=0&pages=2202-2205

[9] Cho Y H, Gainer G H, Fischer A J, et al. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells. Appl Phys Lett, 1998, 73: 1370-1372 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells&author=Cho Y H&author=Gainer G H&author=Fischer A J&publication_year=1998&journal=Appl Phys Lett&volume=73&pages=1370-1372

[10] Dai Q, Schubert M F, Kim M H, et al. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities. Appl Phys Lett, 2009, 94: 111109 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities&author=Dai Q&author=Schubert M F&author=Kim M H&publication_year=2009&journal=Appl Phys Lett&volume=94&pages=111109

[11] Ban K, Yamamoto J, Takeda K, et al. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells. Appl Phys Express, 2011, 4: 052101 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells&author=Ban K&author=Yamamoto J&author=Takeda K&publication_year=2011&journal=Appl Phys Express&volume=4&pages=052101

[12] Ji X L, Ma J, Wei X C, et al. Investigation into low-temperature photoluminescence internal quantum efficiency and defect-recombination in InGaN light-emitting diodes. Phys Status Solidi C, 2014, 11: 718-721 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Investigation into low-temperature photoluminescence internal quantum efficiency and defect-recombination in InGaN light-emitting diodes&author=Ji X L&author=Ma J&author=Wei X C&publication_year=2014&journal=Phys Status Solidi C&volume=11&pages=718-721

[13] Ma J, Ji X L, Wang G H, et al. Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots. Appl Phys Lett, 2012, 101: 131101 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots&author=Ma J&author=Ji X L&author=Wang G H&publication_year=2012&journal=Appl Phys Lett&volume=101&pages=131101

[14] Ryu H Y, Kim H S, Shim J I. Rate equation analysis of efficiency droop in InGaN light-emitting diodes. Appl Phys Lett, 2009, 94: 081114 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Rate equation analysis of efficiency droop in InGaN light-emitting diodes&author=Ryu H Y&author=Kim H S&author=Shim J I&publication_year=2009&journal=Appl Phys Lett&volume=94&pages=081114

[15] Hader J, Moloney J V, Koch S W. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes. Appl Phys Lett, 2010, 96: 221106 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes&author=Hader J&author=Moloney J V&author=Koch S W&publication_year=2010&journal=Appl Phys Lett&volume=96&pages=221106

[16] 16 Wang L, Wang J X, Hao Z B, et al. Efficiency droop effect mechanism in an InGaN/GaN blue MQW LED. Chin Phys Lett, 28: 118105. Google Scholar http://scholar.google.com/scholar_lookup?title=16 Wang L, Wang J X, Hao Z B, et al. Efficiency droop effect mechanism in an InGaN/GaN blue MQW LED. Chin Phys Lett, 28: 118105&

[17] Wang J X, Wang L, Wang L, et al. An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes. J Appl Phys, 2012, 112: 023107 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes&author=Wang J X&author=Wang L&author=Wang L&publication_year=2012&journal=J Appl Phys&volume=112&pages=023107

[18] Wang J X, Wang L, Zhao W, et al. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization. Appl Phys Lett, 2010, 97: 201112 CrossRef Google Scholar http://scholar.google.com/scholar_lookup?title=Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization&author=Wang J X&author=Wang L&author=Zhao W&publication_year=2010&journal=Appl Phys Lett&volume=97&pages=201112